SI4800BDY vishay siliconix document number: 72124 s-41524?rev. d, 16-aug-04 www.vishay.com 1 n-channel reduced q g , fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0185 @ v gs = 10 v 9 30 0.030 @ v gs = 4.5 v 7 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet g d s ordering information: SI4800BDY SI4800BDY-t1 (with t ape and reel) SI4800BDY?e3 (lead (pb)-free) SI4800BDY-t1?e3 (lead (pb)-f ree with tape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 9 6.5 continuous drain current (t j = 150 c) a, b t a = 70 c i d 7.0 5.0 a pulsed drain current (10 s pulse width) i dm 40 a continuous source current (diode conduction) a, b i s 2.3 maximum power dissipation a, b t a = 25 c p d 2.5 1.3 w maximum power dissipation a, b t a = 70 c p d 1.6 0.8 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings limits parameter s y mbol typ max unit mi j ti tabit a t 10 sec r 40 50 maximum junction-to-ambient a steady-state r thja 70 95 c/w maximum junction-to-foot (drain) steady-state r thjf 24 30 c/w notes a. surface mounted on fr4 board. b. t 10 sec.
SI4800BDY vishay siliconix www.vishay.com 2 document number: 72124 s-41524?rev. d, 16-aug-04 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 1.8 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 9 a 0.0155 0.0185 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 7 a 0.023 0.030 forward transconductance a g fs v ds = 15 v, i d = 9 a 16 s diode forward voltage a v sd i s = 2.3 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 8.7 13 gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 9 a 1.5 nc gate-drain charge q gd 3.5 gate resistance r g 0.5 1.4 2.2 turn-on delay time t d(on) 7 15 rise time t r v dd = 15 v, r l = 15 12 20 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 32 50 ns fall time t f 14 25 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI4800BDY vishay siliconix document number: 72124 s-41524?rev. d, 16-aug-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 200 400 600 800 1000 1200 048121620 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 35 40 012345 v gs = 10 thru 5 v t c = ? 55 c 125 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 3 v ? on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0246810 0.000 0.008 0.016 0.024 0.032 0.040 0 5 10 15 20 25 30 v ds ? drain-to-source voltage (v) c rss v ds = 15 v i d = 9 a i d ? drain current (a) v gs = 10 v i d = 9 a v gs = 10 v v gs = 4.5 v gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) c oss c iss 4 v on-resistance vs. drain current r ds(on) ? on-resiistance (normalized)
SI4800BDY vishay siliconix www.vishay.com 4 document number: 72124 s-41524?rev. d, 16-aug-04 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 t j = 150 c i d = 9 a 50 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j ? temperature ( c) safe operating area, junction-to-foot v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 100 ms ? drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 1 s 10 s dc 10 t j = 25 c 10 ms 1 ms 0 90 150 30 60 power (w) single pulse power, junction-to-ambient time (sec) 120 110 10 ? 1 10 ? 2 10 ? 3
SI4800BDY vishay siliconix document number: 72124 s-41524?rev. d, 16-aug-04 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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